Multifunctional memory cells

ABSTRACT

The present disclosure includes multifunctional memory cells. A number of embodiments include a charge transport element having an oxygen-rich silicon oxynitride material, a volatile charge storage element configured to store a first charge transported through the charge transport element, and a non-volatile charge storage element configured to store a second charge transported through the charge transport element, wherein the non-volatile charge storage element includes a gallium nitride material.

PRIORITY INFORMATION

This application is a Continuation of U.S. application Ser. No.16/218,125, filed Dec. 12, 2018, which is a Continuation of U.S.application Ser. No. 15/641,691, filed Jul. 5, 2017, which issued asU.S. Pat. No. 10,262,736 on Apr. 16, 2019, the contents of which areincluded herein by reference.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memory andmethods, and more particularly, to multifunctional memory cells.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits and/or external removable devices in computers orother electronic devices. There are many different types of memoryincluding volatile and non-volatile memory. Volatile memory can requirepower to maintain its data and can include random-access memory (RAM),dynamic random access memory (DRAM), static random access memory (SRAM),and synchronous dynamic random access memory (SDRAM), among others.Non-volatile memory can provide persistent data by retaining stored datawhen not powered and can include NROM flash memory, NAND flash memory,NOR flash memory, read only memory (ROM), and resistance variable memorysuch as phase change random access memory (PCRAM), resistive randomaccess memory (RRAM), magnetic random access memory (MRAM), andprogrammable conductive memory, among others.

Memory devices can be utilized as volatile and non-volatile memory for awide range of electronic applications in need of high memory densities,high reliability, and low power consumption. Non-volatile and/orvolatile memory may be used in, for example, personal computers,portable memory sticks, solid state drives (SSDs), digital cameras,cellular telephones, portable music players such as MP3 players, andmovie players, among other electronic devices.

Memory cells in an array architecture can be programmed to a target(e.g., desired) state. For instance, electric charge can be placed on orremoved from the charge storage structure (e.g., floating gate) of afield effect transistor (FET) based memory cell to program the cell to aparticular data state. The amount of stored charge on the charge storagestructure of an FET-based memory cell can be indicated by a resultingthreshold voltage (Vt) state of the cell.

For example, a single level memory cell (SLC) can be programmed to atargeted one of two different data states, which can be represented bythe binary units 1 or 0. A binary data state represents 1 bit of datawith 2¹ (e.g., 2) data states. As an additional example, some memorycells can be programmed to a targeted one of more than two data states,such as, for instance, to a targeted four bits of data with 2⁴ (e.g.,16) data states (e.g., 1111, 0111, 0011, 1011, 1001, 0001, 0101, 1101,1100, 0100, 0000, 1000, 1010, 0010, 0110, and 1110). Such cells may bereferred to as multi state memory cells, multiunit cells, or multilevelcells (MLCs). MLCs can provide higher density memories withoutincreasing the number of memory cells since each cell can represent morethan one digit (e.g., more than one bit), and therefore can provide highdata storage capacity.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram that illustrates an example of an apparatus inaccordance with an embodiment of the present disclosure.

FIG. 2A illustrates a schematic of an NROM memory cell forimplementation in a multifunctional memory cell in accordance with anembodiment of the present disclosure.

FIG. 2B illustrates a schematic of NAND memory cells for implementationin a multifunctional memory cell in accordance with an embodiment of thepresent disclosure.

FIG. 3 illustrates a portion of a multifunctional memory cell inaccordance with an embodiment of the present disclosure.

FIG. 4 illustrates a portion of a multifunctional memory cell inaccordance with an embodiment of the present disclosure.

FIG. 5 illustrates a portion of a multifunctional memory cell inaccordance with an embodiment of the present disclosure.

FIG. 6 illustrates a portion of a multifunctional memory cell inaccordance with an embodiment of the present disclosure.

FIG. 7 illustrates a portion of a multifunctional memory cell inaccordance with an embodiment of the present disclosure.

FIG. 8 illustrates a portion of a multifunctional memory cell inaccordance with an embodiment of the present disclosure.

FIG. 9 illustrates a portion of a multifunctional memory cell inaccordance with an embodiment of the present disclosure.

FIG. 10 illustrates a portion of a multifunctional memory cell inaccordance with an embodiment of the present disclosure.

FIG. 11 illustrates a portion of a multifunctional memory cell inaccordance with an embodiment of the present disclosure.

FIG. 12 illustrates a portion of a multifunctional memory cell inaccordance with an embodiment of the present disclosure.

FIG. 13 illustrates a memory array having multifunctional memory cellsin accordance with an embodiment of the present disclosure.

DETAILED DESCRIPTION

The present disclosure includes multifunctional memory cells. A numberof embodiments include a charge transport element having an oxygen-richsilicon oxynitride material, a less-nonvolatile (e.g., volatile) chargestorage element configured to store a first charge transported throughthe charge transport element, and a non-volatile charge storage elementconfigured to store a second charge transported through the chargetransport element, wherein the non-volatile charge storage elementincludes a gallium nitride material.

Memory cells in accordance with the present disclosure can have thecharacteristics (e.g., performance characteristics) and/or attributes ofboth a less-nonvolatile (e.g., volatile) memory cell and a non-volatilememory cell within the framework of a single cell. For example, memorycells in accordance with the present disclosure can simultaneouslyfunction (e.g., operate) as both less-nonvolatile and non-volatilememory cells. Such memory cells can be referred to herein asmultifunctional memory cells.

Multifunctional memory cells in accordance with the present disclosurecan be used to functionally replace traditional memory cells, such astraditional SRAM, DRAM, and/or flash (e.g., NROM and/or NAND flash)memory cells, used in previous memory devices. For example,multifunctional memory cells in accordance with the present disclosurecan have a single memory cell design that can be utilized in a singlememory array and single logic circuitry design, while simultaneouslymeeting the performance characteristics and/or attributes of traditionalSRAM, DRAM, and/or flash memory arrays previously provided throughdifferent cell, array, and logic circuitry designs.

For example, multifunctional memory cells in accordance with the presentdisclosure can function as high capacity memory, such as, for instance,for caching and/or for storage of central processing (e.g., CPU)functions, while simultaneously functioning as high performance memory,such as, for instance, for working memory storage and/or for largecapacity file storage (e.g., for operating systems and/or apps). Incontrast, previous memory devices may utilize different types ofvolatile and non-volatile memory cells, with different array and logiccircuitry designs, to achieve such functionality. For instance, previousmemory devices may utilize SRAM and/or DRAM cells for higher speedfunctionality, while utilizing flash memory cells for long-duration(e.g., file) storage functionality.

As such, memory devices that utilize multifunctional memory cells inaccordance with the present disclosure can have a lower cost, consumeless power, and/or have a higher performance than previous memorydevices that utilize different types of memory cells to separatelyachieve volatile and non-volatile functionality. Further,multifunctional memory cells in accordance with the present disclosurecan be multilevel cells (MLCs), thereby achieving high storage densityand/or capacity. Further, multifunctional memory cells in accordancewith the present disclosure can be configured in planar arrays (e.g.,planar channel FET-based) that may be vertically stackable in athree-dimensional memory array and/or alternatively may be configured invertical planes (e.g., vertical channel FET based) in the form ofthree-dimensional memory arrays.

As used herein, “a” or “an” can refer to one or more of something, and“a plurality of” can refer to more than one of such things. For example,a memory cell can refer to one or more memory cells, and a plurality ofmemory cells can refer to two or more memory cells.

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the drawing figure number and theremaining digits identify an element or component in the drawing.Similar elements or components between different figures may beidentified by the use of similar digits.

FIG. 1 is a block diagram that illustrates an example of an apparatus inthe form of an electronic system 1060 in accordance with an embodimentof the present disclosure. System 1060 can be, for example, a computersystem, a memory system, a hand-held device, a cell phone, etc. FIG. 1illustrates an example of a memory hierarchy associated with electronicsystem 1600. In this example, the memory hierarchy may include levels L1to L5. As an example, levels L1 to L5 may be defined by memorycharacteristics (e.g., access speed, and or cycle speed, and or the datathroughput, memory cell size, reliability, endurance, volatility,memory-window size, etc.). For example, in going from level L1 to levelL5, the access speed, and the cycle speed, and the data throughput mayprogressively decrease, while the nonvolatility and storage capacity ofthe memory type may increase.

Note that the data access speed, for example, may be related to the readaccess time of the memory that implies the time it takes to ensure thebinary (“1” or “0”) state of any particular memory bit within a memoryarray (e.g., the higher the access speed, the lower the access time).For example, the cycle time may imply the time it takes to not onlyestablish the binary memory state of any storage bit (either 1, or 0)through programming (“write” and or “erase”) of the specific bit withinthe memory array, but also the time to ensure the memory state which isthe access time. Memory delay (e.g., memory latency) may imply the timeit takes for the memory bit to arrive at the processor node once theprocessor fetches the memory bit triggered by a unit of a clock cycle ofthe processor, for example. Memory bandwidth (e.g., memory throughput),for example, may be related and inversely proportional to the memorylatency. The higher the memory bandwidth, for example, the lower thedelay and lower the memory cycle time. For example, the data throughputmay be inversely related to the data cycle time combined with the datatransfer time to the processor, where the data transfer time to theprocessor may be dependent on the design of the memory output system andthe transfer mode. Therefore, when memory with lower latency (e.g., alower cycle time) may be employed, for example, the processor mayexecute an assigned task (e.g. any specific function or program) fasterand the performance of a system (e.g., digital system) may be improved.

Memory volatility may be related to two aspects of retention of thememory state of any memory bit. One aspect of retention may be theretention of a memory state when the power is available to the memoryarray, implying that no re-writing (e.g., refreshing), such asre-establishing, the memory state is required during a time period. Thisaspect of retention may be longer for SRAM and shorter (in the order ofmilliseconds) for DRAM. Therefore, DRAM may require frequent refreshingof a memory state even when the power is on for the memory array. Theother aspect of memory retention, for example, may be the ability toretain a written (e.g., established) memory state of any bit when thereis no power to the memory array. Memory state retention of this typemight be about 10 years for some nonvolatile memories of some SSDs(NROMs or NAND types of memory cells) and HDDs (magnetic tapes ordisks).

When power is not available, for example, the memory states of SRAMs andDRAMs may be lost. Therefore, these types of memories may be classifiedas volatile memories. For non-volatile memories, for example, the lowerthe degree of volatility, the longer the memory retains data, and thusthe greater the retention. For example, SDDs may, in general, be lessnonvolatile compared to HDDs, where HDDs could retain data for centuriesin properly stored environment.

Silicon-based non-volatile memories may vary significantly in memoryretention, depending on the memory type (NROM or NAND Flash), the memorycell attributes, and the detailed stack structure of the memory celldesign. Some memory cell designs of NROMs and NAND, for example, mayhave at least one year of nonvolatility for most of the applications forwhich such memories are employed.

Another important property of memory, for example, may be the number oftimes memory binary states may be “written” or altered or “programmed”during the life time of the electronic system. In some examples,systems, such as memory systems, may be assumed to last for about 10years, during which some memory bits may be altered for as many asthousand trillion times (1E15 times). The SRAMs and DRAMs, might, forexample, withstand such re-programming known as “endurance.” Endurancelimits of some NROMs, for example, may be about 10 million times, whilethose of some NAND flash memories may be about 100,000 times to aboutone million times. This may limit the application of current NROMs andNANDs for L1, L2, and L3 memory applications, besides theirsignificantly slower cycle time compared to SRAMs and DRAMs.

Electronic system 1060 may include a processor 1065, such as amicroprocessor, that may control electronic system 1060. Processor 1065may include a memory 1070, such as a logic memory, having a memory levelL1. For example, a conventional L1-level memory may be an SRAM volatilememory. Processor 1065 may also include a memory 1075, such as a cachememory, that may have a memory level L2, for example. In some examples,processor 1065 may include a built-in memory management unit (MMU) notshown in the drawing. In some examples, the MMU (not shown) may becoupled to L2 and other memory levels. An example of a conventionalL2-level memory may be an SRAM volatile cache memory.

Advantages of SRAM may include, for example, high performance (e.g.,high data throughput), and high endurance required for L1/L2-levelfunctionality, and ease of fabrication (e.g., that may be compatiblewith complementary-metal-oxide-semiconductor (CMOS) fabricationtechniques). Disadvantages of SRAM may include, limiting memorycapacity, due, for example, to relatively large memory cell sizes (e.g.,with a form factor F×F of about 50 to about 80) and volatility.

Memory 1075 may be coupled to a memory 1080, as shown in FIG. 1. Memory1075 may also be coupled to a memory 1085, and memory 1085 may becoupled to memory 1080, for example. As used in the examples herein, theterm “coupled” may include directly coupled and/or directly connectedwith no intervening elements (e.g., by direct physical contact) orindirectly coupled and/or connected with intervening elements, such asan MMU (not shown).

Memory 1085 may be a main memory (e.g., a working memory) and may have amemory level L3. An example of a conventional L3-level memory may be aDRAM volatile memory. Advantages of DRAM, for example, may includerelatively higher performance compared to non-volatile memories (e.g.,read, write, and erase times of less than about 10 nanoseconds),relatively small (e.g., an F×F of about 6 to about 8)one-transistor-one-capacitor memory cells, yielding higher capacity, andrelatively higher performance with lower cycle time to provide L3-levelfunctionality. DRAM, for example, may provide relatively high enduranceat the expense of power consumption for frequent refreshing of thememory states. Disadvantages of DRAM may include, for example,fabrication (e.g., customized CMOS fabrication for the capacitor may berequired), scalability (e.g., may be difficult to scale to below 30nanometers), and volatile memory cells (e.g., data may need to berefreshed about every millisecond).

Memory 1080 may be a storage memory (e.g., for storing data and/or code)and may have a memory level L4. Examples of L4-level memory may includenon-volatile NOR memory, non-volatile NAND memory, and non-volatileNROM. In some examples, memory 1080 may be referred to as a solid-statememory.

Advantages of NROM (e.g., NROM flash) may include, for example,relatively high read performance (e.g., fast reads), non-volatile memorycells, relatively small (e.g., an F×F of about 6)random-access-one-transistor memory cells, multiple-bit-per cell storagecapability, basic-input/output-system (BIOS) functionality, code storagecapability, and fabrication (e.g., compatible with CMOS fabricationtechniques). Disadvantages of NROM may include, for example, relativelyslow writes, relatively high programming voltages, relatively lowread/write endurance, and relatively poor durability.

Advantages of NAND (e.g., NAND flash) may include, for example, small(e.g., an F×F of about 4) one-transistor memory cells with single-bit-and multiple-bit-per cell storage capability, non-volatile memory cells,and high storage capacity per mm² of silicon. Disadvantages of NAND mayinclude, for example, relatively slow write speeds (e.g., about 1.0 toabout 10 millisecond), relatively slow access (e.g., serial/parallelmemory access), and relatively low write/erase (W/E) endurance (e.g.,about 10³ to about 10⁵ W/E cycles).

Memory 1085 may be coupled to a memory 1090, having a memory level L5,for example. Examples of conventional L5-level memories may includemagnetic memory (e.g., magnetic tapes) and/or optical memory (e.g.,optical discs) for storing data. In some examples, memory 1090 may bereferred to as an HDD memory. Advantages of magnetic memory may include,for example, non-volatility, high-density storage, low cost, highcapacity, and L5-level functionality. Disadvantages of magnetic memorymay include, for example, speed (e.g., long access and cycle times),relatively poor reliability, and moving mechanical parts.

A memory hierarchy, such as that described above, may advantageouslyemploy, for example, the memories described above, such as the L1- toL5-level memories (e.g., SRAM, DRAM, NROM, NAND, and HDD) to fulfillsystem functionality objectives with cost, capability, power,performance, form-factor, portability, and applications in mind. Thehierarchy may require communication between various memories and,therefore, for example, may disadvantageously involve a significantamount of peripheral logic, power, cost, performance compromises,form-factor constraints, reliability issues, and durability issues.This, for example, may suggest a “one-type-fits-all” approach to memorydesign (e.g., a novel one-type-fits-all memory). Except for HDD, someprocessors and memories may (e.g., all) be silicon based, and the memorycell structure may (e.g., all) be similar and may be built using scaledCMOS field-effect transistor technology, for example.

There may be a need for memories that may include silicon-basednon-volatile one-transistor memory cells that may simultaneously satisfythe speed, power, and/or durability requirements of L2-, L3-, andL4-level memories. Such a memory cell may be referred to herein as amultifunctional memory cell.

There may be a need for memories with multifunctional capability tomaintain their information or data when there is a loss of power. Theremay be a need for memories to simultaneously store the shorter retentiondata for end-of-life storage within the same memory cell. There may be aneed, for example, to do away with the conventional memory hierarchy(e.g., in favor of a non-hierarchical organization) that may result infaster communication with the processor. Such a memory may be referredto herein as silicon based-unified multifunctional memory, or MSUMmemory.

There may also be a need to extend the MSUM memory cell capability toprovide higher capacity data storage within the memory cell in order toachieve MLC capability. Such a memory cell design may be referred toherein as an MLC MSUM cell.

Embodiments of the present disclosure include memory that may include,for example, non-volatile memory cells in which an active element, suchas a field-effect transistor, may be integrated with a dielectric stackthat can store a charge in the gate stack of the field-effecttransistor. The gate stack may control the entire transistor channel orpart of the transistor channel in the memory cell design. In someexamples, such a memory might be referred as MSUM. In some examples, thedesign of dielectric stack may be varied to incorporate L4 or L5 levelMLC storage capacity. Such a memory cell might be referred as MLC MSUM.In some examples, the design of the dielectric stack may be varied sothat the non-volatile memory cell (e.g., a MSUM memory cell) may operatesimultaneously as a L2-, L3-, L4-, or L5-level memory cell. For example,the memory cells disclosed herein may have higher performance, lowerpower consumption, and higher reliability than, for example, someconventional NVM cells. Employing such a memory cell in the framework ofsub-arrays and arrays may eliminate the need of conventional memoryhierarchy, thereby improving memory and system attributes.

In some examples, field-effect-transistor- (e.g., FET-) based MSUMdevices in accordance with the present disclosure may be designed toachieve different functionality, dependent on intrinsic dielectric stackcharacteristics of a design, by adding or subtracting dielectrics in thedielectric stack. MSUM technology may be seamlessly integrated with theCMOS logic technology, for example, unlike conventional memories, suchas DRAM, that may have unique customized integration requirements. MSUMsmay be differentiated by the attributes of their charge transport,charge storage, and charge retention (e.g., charge blocking)characteristics. For example, the intrinsic memory-cell attributes maybe different in terms of programming speed, power, and refreshrequirements that may result in cycle-time variations, variations indata throughput and system capability, and differing applicability toreplace conventional memories by functionality.

In some examples, some MSUM memory cells in accordance with the presentdisclosure may have a programming peak field lower than 8 MV/cm, whichmay be significantly lower than that for conventional NVMs.Consequently, in some examples, memory durability (e.g., programmingendurance) could match those of volatile SRAM and DRAM memories, therebyenabling functional replacements of volatile memories in digital systemsnot currently feasible by conventional NROMs and NAND flash based SSDs.

Some DRAMs may operate at 1.5 Volts, and may need to be refreshed aboutevery 10 milliseconds. However, some MSUMs in accordance with thepresent disclosure may need to be refreshed (e.g., reprogrammed) onlyabout every 10 seconds. Further, some DRAM memory cells, for instance,may require twice as much area as some MSUMs in accordance with thepresent disclosure.

In various examples of the present disclosure, MSUM-memory-cellfabrication may be compatible withcomplementary-metal-oxide-semiconductor (CMOS) fabrication techniques.This may allow, for example, the dielectric stack to be fabricated to adesired memory level (L2, L3, L4, or L5) with a minimal number ofadditional processing steps. Moreover, the MSUM memory cells may bescalable to about a five-nanometer feature size. For example, suchscaling may be difficult for conventional DRAM designs.

MSUM memory cells in accordance with the present disclosure may beimplemented (e.g., in scaled silicon) using, for example, CMOS logictechnology and a set of unified and complimentary integration schemesthat may eliminate some separate, custom-integration technologypractices, such as those currently employed for DRAM (e.g., for L3), andNROM (for code, BIOS, etc.) and NAND-flash (e.g., for L4) memory chips.Additionally, custom interface logic and packaging may be required forcommunication between the processor and between different levels andtechnology-specific types of memories within the previous hierarchicalmemory systems. MSUM memory cells in accordance with the presentdisclosure may (e.g., only) add or subtract specific selecteddielectrics (e.g., as thin films) in the gate stack design in a unifiedprocess integration methodology with the scaled CMOS logic technology toenable functionality equivalence from L2 through L5. This maypotentially have, for example, multiple benefits, such as a) technologycompatibility, b) productivity, c) enhancement in technologyreliability, and d) reduction (e.g., elimination) of interfacingtechnology and packaging between different memory types and betweenlogic and memories. For example, potential benefits at the system levelmay include not only process complexity reduction, but also, costreduction, power reduction, and enhancements in performance, andreliability. Additional potential benefits may include a reduction intest cost and component product assurance cost both at a memory leveland a system level,

MSUMs in accordance with the present disclosure may allow for similarmemory cell designs and array architectures throughout the memoryhierarchy that may provide a spectrum of cycle time, latency targets,and data throughput to deliver varying functionality and durabilityrequirements that might be balanced for certain applications. Due to theprocess commonality, MSUM-cell designs might be implemented in differentcapacity arrays and or subarrays within a single chip or multiple chipsto address system cost, power, form-factor, performance, and durabilityobjectives. This may provide more flexibility in system design, forexample.

Some MSUM memory cell designs in accordance with the present disclosure,for example, may employ an energy-efficient direct tunneling mechanismto achieve desired system performance and functionality. Some MSUMmemory cell designs in accordance with the present disclosure may extendthe direct tunnel mechanism further through internal field enhancementsusing appropriately selected multi-layered direct tunneling dielectricfilms with progressive band-energy offsets coupled with multi-stepdirect tunneling. For example, this approach may allow additionalvoltage scalability with higher programming speed for the memory cells,and, consequently, power savings at the desired performance level, thatmay be difficult to achieve using conventional memories and hierarchicalmemory designs of comparable performance and applicability.

Band-engineered MSUM memory cells, for example, may employ stack designand tailored programming to establish targeted speed-retention tradeoffstowards achieving the system data-rate throughput (L2/L3/L4functionality) for effective execution of functions. For example, thisapproach may reduce data transmission delays, and thus increase dataavailability, at appropriate processing nodes, reduce pre-fetch datastorage requirements, reduce machine cycle time for execution offunctions, reduce data refresh requirements, reduce complexity in busdesign, etc.

MSUM memory cell designs in accordance with the present disclosure mayprovide, for example, unique sets of functional attributes viadielectric stack designs for FET based charge-trap memory cells. Forexample, the MSUM memory cell and array design may have the potential tocreate superior digital systems with flexible design attributes withinthe framework of a unified technology and memory cell and array designsand yet with versatile functionality to broaden application base notcost-effective with current conventional approaches.

MSUM memory cell designs in accordance with the present disclosure mayprovide, for example, unique memory sub-arrays, arrays, and/orsub-systems with specific attributes within the framework of a unifiedscaled CMOS technology, by incorporating or eliminating certaindielectric layers in the gate stack design of the memory cell. Suchversatility may not be available in conventional memory cell and arraydesigns. These attributes may include, for example, 1) cost optimizedMSUM designs for L2/L3/L4, 2) power optimized MSUM designs for L2/L3/L4,3) cost and performance optimized MSUM designs for L1/L2/L3/L4, 4)performance optimized (e.g., high performance) MSUM designs forL1/L2/L3/L4, and 5) capacity optimized (e.g., MLS) MSUM designs forL1/L2/L3/L4, plus MLC.

FIG. 2A illustrates a schematic of an NROM memory cell 2100 forimplementation in a multifunctional memory cell in accordance with anembodiment of the present disclosure. FIG. 2B illustrates a schematic ofNAND memory cells 2210 for implementation in a multifunctional memorycell in accordance with an embodiment of the present disclosure.

As previously described herein, MSUM cells in accordance with thepresent disclosure can be implemented in the form of either 1) atwo-transistor NROM cell with one fixed Vt transistor in series with anNV-transistor with MSUM characteristics sharing a common diffusion mode,or 2) a split gate (or split channel) implementation of the memory cellof form 1 whereby the fixed Vt element acts as the access gate and isintegrated with the variable Vt NVM element which acts the control gate.Together the access gate and control gate can control the channel andset the memory thresholds or the memory states. For instance, the accessgate can be designed to set the erase state for the memory cell andperform “over-erasure” protection for the memory, and the control gatecan be programmed to define the programmed (e.g., written) states forthe cell (e.g., “1” for 1 bit binary state, “01, 10, 11” for a DLCproviding 2-bits per cell storage, “001, 010, 100, 110, 101, 011, 111”for a TLC providing 3-bits per cell storage, etc.). The integrated twodevice memory cell may be referred to herein as a 1.5 T NVM cell.

A schematic of an example configuration of such a cell is illustrated inFIG. 2A. The type of NROM cell illustrated in FIG. 2A can be used forMLC-NROMs because it can provide over-erasure protection andconsequently tight distribution of the erase memory state (e.g., “0”,“00”, or “000” for 1 bit, 2 bit, or 3 bit storage, respectively) for thememory array.

As shown in FIG. 2A, NROM cell 2100 may be adjacent to (e.g., over) asemiconductor 2102, such as P-type (e.g., P⁻-doped) silicon substrate.Source/drains 2104 (e.g., n⁺-type or n⁻-type diffusion regions) may bein semiconductor 2102. NROM cell 2100 can include a split gate structure(e.g., access gate element 2106 and overlapping control gate element2114), and a stack having a charge storage (e.g., trap) element 2108,charge blocking element 2110, and an interface metallic layer 2112, asillustrated in FIG. 2A. Examples of the gate, charge storage element,charge blocking element, and interface layer will be further describedherein.

FIG. 2B illustrates a schematic representation of a planar NAND memorystring 2200, which can be used for high capacity storage. For example,as many as 256 bits could be serially stored within such a NAND stringwhere the bits are accessed serially. The NAND string can provide thehighest memory density for all memory cells, at the expense ofperformance since the memory cells need to be accessed serially withineach string.

As shown in FIG. 2B, NAND string 2200 can include a number of NAND cells2210 adjacent to (e.g., over) a semiconductor 2202, such as P-type(e.g., P⁻-doped) silicon substrate. Source/drains 2204 (e.g., n⁺-typediffusion regions) may be in semiconductor 2102 to form source line 2206and bit line 2208, respectively. As illustrated in FIG. 2B, eachrespective NAND cell 2210 can include a stack comprising, among otherelements, a charge storage (e.g., trap) element 2212, examples of whichwill be further described herein. Further, NAND string 2200 can includea bit-line select gate 2214 (to select the specific NAND string) on oneend and a source-line select gate 2214 at the other end adjacent tosource/drains 2204, as illustrated in FIG. 2B.

Embodiments of the present disclosure, however, are not limited to thespecific designs illustrated in FIGS. 2A and 2B. Rather, MSUM conceptsin accordance with the present disclosure could be applicable to alltypes of memory cells previously described herein by incorporating theirunique stack designs to provide simultaneous multi-functionality.Further, as previously described herein, all MSUM cells described hereinare implementable with common scaled CMOS technology.

In all MSUM cell designs to be described herein, tantalum nitride (TaN)may be used as the metallic interface to the gate to partially controlthe threshold of the device. Further, in all SUM designs, the equivalentoxide thickness (EOT) of the logic FETs (both PFET and NFET) may be setby the interface dielectric at the substrate end and the final blockingelement of the SUM stack at the metal end. The intermetallic TaNmaterial may be chosen to set the work-function for the logic FETs aswell as the MSUM devices, and may be common to both logic and memorydevices for all cases.

In all MSUM cell designs to be described herein, the simultaneousmulti-functionality may be adjusted and simultaneously, the programperformance (e.g., cycle) time could be adjusted by optimizing theprogramming pulse scheme. Although the stack designs described hereinmay be either cost-focused, power-focused, capacity-focused,performance-focused, or cost/performance-focused designs, the attributesof the designs could be altered and tailored for specific applicationsby altering the thickness of particular elements (e.g., layers) shown,eliminating particular elements, and/or adding additional (e.g.,optional) layers for tunneling, trapping, and/or blocking functions.

Further, MSUM cell designs described herein may include a lessnon-volatile charge storage element, and a non-volatile charge storageelement. As used herein, a “less non-volatile” charge storage element ofthe multifunctional cell can be a charge storage element that has afunctionality level that is lower than the functionality level of thevolatile charge storage element of the cell. For example, the lessnon-volatile charge storage element may have volatile levelfunctionality, and as such may also be referred to as a volatile chargestorage element.

FIG. 3 illustrates a portion of a multifunctional memory cell 300 inaccordance with an embodiment of the present disclosure, designed forlower cost, higher performance, lower power L2 and L3 functionality,with optional simultaneous extendibility to L4 functionality. Forexample, FIG. 3 illustrates a partial energy band diagram of the gatestack structure of multifunctional memory cell 300. Cell 300 can be, forinstance, a five dielectric layer low cost, high performance memory cellthat can provide L2 and L3 functionality while being cheap and/or easyto process (e.g., fabricate). In an embodiment, cell 300 can comprise astack that includes a charge transport (e.g., tunnel) element having anoxygen-rich silicon oxynitride (OR-SiON) material and a hafnium dioxide(HfO₂) material (e.g., layer), a silicon oxynitride (Si₂ON₂) lessnon-volatile charge storage element, a gallium nitride (GaN)non-volatile charge storage element, and a hafnium lanthanum oxynitride(HfLaON) charge blocking element, as will be described herein.

As shown in FIG. 3, cell 300 can include a substrate element 310, acharge transport (e.g., tunneling) element 317 adjacent (e.g., in directcontact with) substrate element 310, a less non-volatile charge storage(e.g., trapping) element 313 adjacent charge transport element 317, anon-volatile charge storage element 314 adjacent volatile charge storageelement 313, a charge blocking element 315 adjacent non-volatile chargestorage element 314, and a gate element 316 adjacent charge blockingelement 315. Substrate element 310 can be, for example, a siliconmaterial (e.g., a silicon substrate), and gate element 316 can be aninsulator-metal interface material (e.g., layer) such as, for instance,tantalum nitride (TaN) or titanium nitride (TiN).

Less non-volatile (e.g., DRAM) charge storage element 313 can be asilicon oxynitride of a specific composition (Si₂ON₂) material, whichcan provide stability and a large retention window. Non-volatile (e.g.,flash) charge storage element 314 can be a gallium nitride (GaN)material, which can have a negative conduction offset band with respectto silicon and provide a high trapping density (e.g., greater than 10¹³per square centimeter). Further, in some examples, non-volatile chargestorage element 314 may also include a silicon-rich nitride material,such as, for instance, an injector silicon-rich nitride material (notshown in FIG. 3) to further enhance charge storage.

Charge blocking element 315 can be a thermally stable, low leakagehafnium oxynitride material, such as a hafnium lanthanum oxynitride(HfLaON) material, a hafnium aluminum oxynitride (HfAlON) material, ahafnium tantalum oxynitride (HfTaON) material, or a hafnium siliconoxynitride (HfSiON) material, for instance. Such a material can be atrap free dielectric that has low conductivity and a high-K value thatcan result in a low equivalent oxide thickness (EOT). Further, such amaterial can have high thermal and structural stability, high breakdownstrength, and can be compatible with the metallic interface of gateelement 316.

In the example illustrated in FIG. 3, charge transport element 317includes a first material (e.g., first layer) 311, and a second material(e.g., second layer) 312. First material 311 can be an oxygen-richsilicon oxynitride material that can provide interface stability withsubstrate element 310, and second material 312 can be a hafnium dioxide(HfO₂) material. As an example, oxygen-rich silicon oxynitride materialcan be a high-K material having a composition of N/N+O of approximately0.18 and an atomic concentration of oxygen in the range of 50-60%, andcan be fabricated using low-pressure chemical vapor deposition, atomiclayer deposition, or thermal/plasma oxidation/nitridation techniques,for instance. Utilizing such materials for first material 311 and secondmaterial 312 can increase the speed and efficiency of charge transportthrough charge transport element 317 during program and/or eraseoperations (e.g., while an external field exists), while maintaining alow conductivity to prevent reverse transport of charge stored by chargestorage elements 313 and/or 314 back through charge transport element317 (e.g., when the external field is removed). The transport of chargethrough charge transport element 317 will be further described herein.

First material 311 and second material 312 can have thicknesses of 1nanometer (nm) and 3 nm, respectively, and charge transport element 317can have an EOT of approximately 1.2 nm. Further, less non-volatilecharge storage element 313 and non-volatile charge storage element 314can have thicknesses of 2 nm and 3 nm, respectively, and a combined EOTof approximately 1.3 nm. Further, charge blocking element 315 can have athickness of 6 nm, and an EOT of approximately 2.0 nm. The combinedtotal thickness and EOT for the stack comprising charge transportelement 317, volatile and non-volatile charge storage elements 313 and314, and charge blocking element 315 can be, for instance, approximately15 nm and approximately 4-5 nm, respectively. This embodiment can be alow power (e.g., less than or equal to 5 V) design with highperformance, as previously described.

During operation of cell 300, such as, for instance, during a programoperation being performed on cell 300, a charge, such as, for instance,an electron, may be transported from substrate element 310 throughcharge transport element 317 (e.g., through first material 311 andsecond material 312) to either less non-volatile charge storage element313 or non-volatile charge storage element 314. For instance, in theexample illustrated in FIG. 3, a first charge 318-1 is being transportedthrough charge transport element 317 to less non-volatile charge storageelement 313, and a second charge 318-2 is being transported throughcharge transport element 317 to non-volatile storage element 314. Insome examples, charges 318-1 and 318-2 can be simultaneously transportedthrough charge transport element 317, and in some examples charges 318-1and 318-2 can be separately (e.g., at different times) transportedthrough charge transport element 317.

As an example, a program operation performed on cell 300 can includeapplying a program (e.g., write) voltage to cell 300, and whether thecharge is transported to less non-volatile charge storage element 313 ornon-volatile charge storage element 314 during the program operation maydepend on the duration for which the program voltage is applied to thecell. For instance, a program voltage of ≤+/−5 volts (V) applied to thecell for ≤5 nanoseconds (ns) may result in the charge being transportedto less non-volatile charge storage element 313, while a program voltageof +/−≤5 V applied to the cell for ≥20 ns may result in the charge beingtransported to non-volatile charge storage element 314. Such low programvoltage and durations may result in program operations performed on cell300 consuming less power than program operations performed on previousmemory cells. When the pulse duration is extended to 100 ns or longer,more charges may be stored in storage element 314, and may remain storedfor an extended period of time to provide either extended L3 or L4functionality. To achieve L4 functionality, the thickness of chargeblocking element 315 could be increased, and pulsing conditions could beoptimized to achieve longer retention and larger memory window.

The charge (e.g., charges 318-1 and/or 318-2) may be transported throughcharge transport element 317 by, for instance, direct tunneling throughcharge transport element 317. For example, charge transport element 317can be a double layer progressive band offset (PBO) tunnel barrier thatcan provide internal field-aided enhanced electron transport, and thecharge may tunnel through the PBO tunnel barrier via direct electrontunneling.

The charge can then be trapped and stored by the charge storage elementto which it has been transported. For instance, in the exampleillustrated in FIG. 3, charge 318-1 is being trapped and stored by lessnon-volatile charge storage element 313, and charge 318-2 is beingtrapped and stored by non-volatile charge storage element 314.

Charge blocking element 315 can prevent the stored charge from leakingwhile it is being stored. For instance, in the example illustrated inFIG. 3, charge blocking element 315 can prevent leakage of charge 318-1stored by volatile charge storage element 313, and charge blockingelement 315 can prevent leakage of charge 318-2 stored by non-volatilecharge storage element 314.

FIG. 4 illustrates a portion of a multifunctional memory cell 401 inaccordance with an embodiment of the present disclosure, designed forstorage capacity and enhanced erasing capability with relatively higherperformance for L2-L3 functionality, which can be achieved byincorporating two additional materials (e.g., layers) in the stackdesign-one for enhanced hole tunneling (e.g., material 424), and anotherfor enhanced charge storage (e.g., material 426). For example, FIG. 4illustrates a partial energy band diagram of multifunctional memory cell401. Cell 401 can be, for instance, a low cost, high capacity memorycell that can provide both L2-L3 functionality and L4 functionality,including, for instance, working memory and/or large capacity filestorage, while being cheap and/or easy to process (e.g., fabricate). Inan embodiment, cell 401 can comprise a stack that includes a chargetransport element having an OR-SiON material and an HfLaON material, anSi₂ON₂ less non-volatile charge storage element, an additional lanthanumoxide (La₂O₃) charge transport element to enable field-enhanced holetransport during erasing, a non-volatile charge storage element having aGaN material and an injector silicon-rich nitride (i-SRN) material forextended charge storage, and an HfLaON charge blocking element, as willbe described herein.

As shown in FIG. 4, cell 401 can include a substrate element 420, acharge transport element 429 adjacent (e.g., in direct contact with)substrate element 420, a less non-volatile charge storage element 423adjacent charge transport element 429, an additional charge transportelement 424 adjacent element 423, a non-volatile charge storage element425 in combination with extended charge storage material 426 togethercomprising element 430 adjacent element 424, a charge blocking element427 adjacent non-volatile charge storage element 430, and a gate element428 adjacent charge blocking element 427. Substrate element 420 can be,for example, a silicon material, and gate element 428 can be aninsulator-metal interface material such as, for instance, TaN or TiN.

In an embodiment, less non-volatile (e.g., DRAM) charge storage element423 can be a Si₂ON₂ material, which can provide stability and a largeretention window. In an additional embodiment, less non-volatile chargestorage element 423 can be a silicon nitride (Si₃N₄) material, which canhave a shallow trap depth to enhance detrapping and increase the speedof erase operations performed on cell 401.

In the example illustrated in FIG. 4, non-volatile (e.g., flash) chargestorage element 430 includes a first non-volatile charge storagematerial 425, and a second non-volatile charge storage material 426.First material 425 can be a GaN material, which can have a negativeconduction offset band with respect to silicon and provide a hightrapping density, and second material 426 can be a silicon-rich nitridematerial, such as, for instance, an injector silicon-rich nitridematerial, to further enhance charge storage (e.g., the memory window)for the flash memory functionality.

Charge blocking element 427 can be a thermally stable, low leakagehafnium oxynitride material, such as a HfLaON material, a HfAlONmaterial, a HfTaON material, or a HfSiON material, for instance. Such amaterial can have benefits analogous to those previously described forcharge blocking element 316 in connection with FIG. 3.

In the example illustrated in FIG. 4, charge transport element 429includes a first material 421, and a second material 422. As illustratedin FIG. 4, memory cell 401 (e.g., charge transport element 429) may alsoinclude a third material 424 between (e.g., in direct contact with) lessnon-volatile charge storage element 423 and non-volatile charge storageelement 430.

First material 421 can be an oxygen-rich silicon oxynitride materialthat can provide interface stability with substrate element 420. Forinstance, the oxygen-rich silicon oxynitride material can be a high-Kmaterial having a composition and fabrication analogous to thatpreviously described for first material 311 of charge transport element317 in connection with FIG. 3. In an embodiment (e.g., the embodiment inwhich less non-volatile charge storage element 423 is a Si₂ON₂material), second material 422 can be a hafnium oxynitride material(e.g., HfLaON) and third material 424 can be an HfO₂ material. In anadditional embodiment (e.g., the embodiment in which volatile chargestorage element 423 is a Si₃N₄ material), second material 422 and thirdmaterial 424 can be a lanthanum oxide (La₂O₃) material to enhance bothelectron and hole tunneling, providing lower band offset for holetunneling.

Utilizing such materials for first material 421, second material 422,and third material 424 can have benefits analogous to those previouslydescribed for charge transport element 317 in connection with FIG. 3.Additionally, utilizing La₂O₃ for second and/or third materials 422 and424, respectively, can allow for both electron and hole tunneling, whichcan further increase the speed and efficiency of charge transportthrough charge transport element 429 during program and/or eraseoperations. Further, utilizing such materials for charge transportelement 429, less non-volatile storage element 423, and non-volatilestorage element 430 can make cell 401 cheap and/or easy to process,while providing multifunctional capability and enhanced charge storagecapacity simultaneously.

First material 421, second material 422, and third material 424 can havethicknesses of 1 nm, 2 nm, and 3 nm, respectively, and charge transportelement 429 can have an EOT of approximately 1.7 nm. Further, lessnon-volatile charge storage element 423 and non-volatile charge storageelement 430 can have thicknesses of 2 nm and 5 nm, respectively, and acombined EOT of approximately 3.1 nm. Further, charge blocking element427 can have a thickness of 6-10 nm, and an EOT of approximately 2.0-2.5nm. The combined total thickness and EOT for the stack comprising chargetransport element 429, volatile and non-volatile charge storage elements423 and 430, and charge blocking element 427 can be, for instanceapproximately 26 nm and approximately 8 nm, respectively.

During operation of cell 401, such as, for instance, during a programoperation being performed on cell 401, a charge (e.g., an electron) maybe transported from substrate element 420 through charge transportelement 429 (e.g., through first material 421, second material 422,and/or third material 424) by enhanced direct tunneling (e.g., PBO DTM)to either less non-volatile charge storage element 423 or non-volatilecharge storage element 430. For instance, in the example illustrated inFIG. 4, a first charge 431-1 is being transported through chargetransport element 429 to less non-volatile charge storage element 423,and a second charge 431-2 is being transported through charge transportelement 429 (e.g., including through third element 424) to non-volatilestorage element 430 (e.g., to first non-volatile charge storage material425). In some examples, charges 431-1 and 432-2 can be simultaneouslytransported through charge transport element 429, and in some examplescharges 431-1 and 432-2 can be separately (e.g., at different times)transported through charge transport element 429. When the gate polarityis reverses for erasing, enhanced hole tunneling from element 430 maytake place through the above-mentioned direct tunnel (PBO-DTM for holes)barriers transporting holes to both the less non-volatile charge storageelement 423 and the non-volatile charge storage element 430.Simultaneously, electrons from less non-volatile charge storage element423 and the non-volatile charge storage element 430 may be detrapped,and either get compensated with incoming holes or tunnel back to siliconsubstrate 420. This may significantly reduce erase time and cycle time,enhancing performance.

As an example, a program operation performed on cell 401 can includeapplying a program (e.g., write) voltage to cell 401, and whether thecharge is transported to volatile charge storage element 423 ornon-volatile charge storage element 430 during the program operation maydepend on the duration for which the program voltage (for both write anderase, =/−Vpp) is applied to the cell. For instance, a program voltageof +/−7 V applied to the cell for 10 ns to 100 ns may result in thecharge being transported to volatile charge storage element 423 toenable L2 and/or L3 functionality, while a program voltage of +/−7 Vapplied to the cell for 500 ns to 100 microseconds (μs) may result inthe charge being transported to non-volatile charge storage element 430.

The charge (e.g., charges 431-1 and/or 432-2) may be transported throughcharge transport element 429 and 424 by, for instance, tunneling throughcharge transport element 429. For example, charge transport element 429(e.g., including third material 424) can be a double tunnel, triplelayer PBO tunnel barrier that can provide internal field-aided enhancedelectron transport, and the charge may tunnel through the PBO tunnelbarrier via direct electron tunneling or hole tunneling.

The charge can then be trapped and stored by the charge storage elementto which it has been transported. For instance, in the exampleillustrated in FIG. 4, charge 431-1 is being trapped and stored by lessnon-volatile charge storage element 423, and charge 431-2 is beingtrapped and stored by non-volatile charge storage element 430. Chargeblocking element 428 can prevent the stored charge from leaking while itis being stored, in a manner analogous to charge blocking element 315previously described in connection with FIG. 3.

FIG. 5 illustrates a portion of a multifunctional memory cell 502 inaccordance with an embodiment of the present disclosure, describing aseven layer stack design with all nitride and oxynitride dielectricmaterials to provide fabrication ease and process compatibility, whilefocused on simultaneous L3 and MLS L4 functionality with extended L3refresh time for power saving. For example, FIG. 5 illustrates a partialenergy band diagram of multifunctional memory cell 502. Cell 502 can bea high capacity cell with an extended refresh, and can provide both L3and L4-MLS functionality, for example. In an embodiment, cell 502 cancomprise a stack that includes a charge transport element having anHfTaON material between two OR-SiON materials, a nitride lessnon-volatile charge storage element, a non-volatile charge storageelement having a GaN material and an i-SRN material, and an HfTaONcharge blocking element, as will be described herein. Since allmaterials are either nitride or in the oxynitride family of higher Kdielectric films that can be deposited by the same or similar tool withprocessing technology, the process complexity and cost can be reduced.

As shown in FIG. 5, cell 502 can include a substrate element 525, acharge transport element 542 adjacent (e.g., in direct contact with)substrate element 535, a less non-volatile charge storage element 538adjacent charge transport element 542, a non-volatile charge storageelement 539 combined with a charge storage element 540 togethercomprising element 543, a charge blocking element 541 adjacent thenon-volatile charge storage element 543, and a gate element 545 adjacentcharge blocking element 541. Substrate element 535 can be, for example,a silicon material, and gate element 545 can be an insulator-metalinterface material such as, for instance, TaN or TiN. Charge blockingelement 541 can be a thermally stable, low leakage hafnium oxynitridematerial (e.g., HfLaON, HfAlON, HfTaON, or HfSiON) with benefitsanalogous to those previously described for charge blocking element 316in connection with FIG. 3.

Less non-volatile (e.g., DRAM) charge storage element 538 can be anitride material, which can provide stability and a large retentionwindow, thereby providing an extended refresh capability being adjacentto the triple-layer VARIOT barrier 542 at the expense of somewhat slowerperforming L3. Non-volatile (e.g., NROM) charge storage element 543 caninclude a first non-volatile charge trapping material 539, and a secondcharge storage material 540. First material 539 can be a GaN material,which can have a negative conduction offset band with respect to siliconand provide greater trap depth and a high trapping density, and secondmaterial 540 can be a silicon-rich nitride material, such as, forinstance, an injector silicon-rich nitride material, to further enhancecharge storage (e.g., the memory window) for the flash memory L4functionality.

In the example illustrated in FIG. 5, charge transport element 542includes a first material 536-1, a second material 536-2, and a thirdmaterial 537 between materials 536-1 and 536-2 forming a three-layerdirect tunnel VARIOT barrier. First material 536-1 and second material536-2 can both be a high-K oxygen-rich silicon oxynitride materialhaving a composition and fabrication analogous to that previouslydescribed for first material 311 of charge transport element 317 inconnection with FIG. 3. Third material 537 can be an HfTaON material.Further, first material 536-1, second material 536-2, and third material537 can each be ultra-thin (e.g., 1 nm thick) materials.

Utilizing such materials for first material 536-1, second material536-2, and third material 537 in charge transport element 542 can havebenefits analogous to those previously described for charge transportelement 317 in connection with FIG. 3. Additionally, utilizing suchmaterials in charge transport element 542 can provide barrier thinning,which can further increase the speed and efficiency of charge transport(e.g., electron fluence) through charge transport element 542 duringprogram and/or erase operations.

During operation of cell 502, such as, for instance, during a programoperation being performed on cell 502, a charge (e.g., electron) 544 maybe transported from substrate element 535 through charge transportelement 542 (e.g., through first material 536-1, third material 537, andsecond material 536-2) to either less non-volatile charge storageelement 538 or non-volatile charge storage element 543 (e.g., firstnon-volatile charge storage material 539), as illustrated in FIG. 5. Thecharge 544 may be transported through charge transport element 542 by,for instance, direct tunneling through the triple-layer charge transportelement 542.

For example, charge transport element 542 can be a variable oxidethickness (VARIOT) tunnel barrier that can provide simultaneouslybarrier thinning and lower reverse tunneling, and the charge may tunnelthrough the VARIOT tunnel barrier using only single carrier electrontransport, with the high hole barrier of materials 536-1, 536-2, and 537preventing hole tunneling from substrate 535. Further, charge transportelement 542 can provide internal field-aided enhanced electrontransport, as the charge may gain internal field along the conductionband of third material 537 during the program operation. At the sametime, the high energy barrier presented by material 536-2 may reduce thereverse tunneling of charges trapped in elements 538 and 539. As such,while the effective tunnel distance for the charge may be equal to thethickness of first material 536-1 during programming, the effectivetunneling distance for charges trapped in element 538 would be equal tothe entire physical thickness of charge transport element 542, therebyreducing charge loss and extending the refresh time for L3 functionalityduring standby.

The charge can then be trapped and stored by the charge storage element(e.g., charge storage element 538 or 543) to which it has beentransported. For instance, in the example illustrated in FIG. 5, chargetrapping may occur at two different energy levels corresponding to twodifferent tunneling distances (e.g., the distance to less non-volatilecharge storage element 538 and the distance to non-volatile chargestorage element 543) are provided, which can allow both the speed ofcharge transport for trapping, and/or length of time for which thecharge is being trapped and stored, to be varied. Charge blockingelement 541 can prevent the stored charge from leaking to the gate whileit is being stored, in a manner analogous to charge blocking element 315previously described in connection with FIG. 3.

First material 536-1 and second material 536-2 can both have thicknessesof 1 nm each, with the second material being around 2 nm, andconsequently, charge transport element 542 may have a physical thicknessof 4 nm with EOT of approximately 2 nm. Further, less non-volatilecharge storage element 538 and non-volatile charge storage element 539can have thicknesses of 3 nm and 5 nm, respectively, with the material540 being 4 nm thick. The combined EOT of the trapping and storagelayers could be approximately 5 nm, with the physical thickness being 12nm. Further, charge blocking element 541 can have a thickness of 7-9 nm,and an EOT of approximately 2.0 nm. The combined total thickness and EOTfor the stack can be, for instance approximately 25 nm and approximately9 nm, respectively.

The stack can be designed to operate at +/−Vpp of 7 V, focused toprovide a relatively slower L3 functionality with extended refresh forL3 and consequently lower programming power. It can also providesimultaneously high capacity low cost L4 functionality with MLCcapability, with 3 bit/cell L4 capacity. Further, it can provide lowprocessing complexity in stack fabrication and technology integration.The L3 performance can be around 50-100 ns, and the L4 performance canbe around 1000 ns for TLC storage.

FIG. 6 illustrates a portion of a multifunctional memory cell 603 inaccordance with an embodiment of the present disclosure. The cellillustrated in FIG. 6 can be analogous to the example previouslydescribed in connection with FIG. 5, in that it describes a seven-layerstack design with all nitride and oxynitride dielectric materials toprovide fabrication ease and process compatibility, while focused onsimultaneous L2-L3 and MLS L4 functionality suitable for lower cost NANDflash application and integration. Cell 603 can be a low cost, higher(e.g., L2, L3) performance memory cell that can provide L2-L3functionality but relatively slower L4 functionality compared to thecell described in connection with FIG. 5, while being easier to process(e.g., fabricate) and providing higher yield and reliability. In anembodiment, cell 603 can comprise a stack that includes a chargetransport element having an OR-SiON material and an HfSiON material, annitride volatile charge storage element, an additional HfSiON chargetransport element, a non-volatile charge storage element having a GaNmaterial and an i-SRN material, and an HfSiON charge blocking element,as will be described herein. Since all materials are either nitride orof the oxynitride family of higher K dielectric films which can bedeposited by the same or similar tools with convention processingtechnology, process complexity and cost can be reduced.

As shown in FIG. 6, cell 603 can include a substrate element 650, acharge transport element 656 adjacent (e.g., in direct contact with)substrate element 650, a volatile charge storage element 653 adjacentcharge transport element 656, and a non-volatile charge storage element655. Substrate element 650 can be, for example, a silicon material.Further, although not shown in FIG. 6, cell 603 can also include acharge blocking element adjacent non-volatile charge storage element655, and a gate element adjacent the charge blocking element. The chargeblocking element and gate element can be analogous to charge blockingelement 315 and gate element 316, respectively, previously described inconnection with FIG. 3.

In the example illustrated in FIG. 6, volatile (e.g., DRAM) chargestorage element 653 can be a nitride material, such as, for instance, aSi₃N₄ material, which can have a shallow trap depth to enhancedetrapping and increase the speed of erase operations performed on cell603. Non-volatile (e.g., NROM) charge storage element 653 can be a GaNmaterial, which can have a negative conduction offset band with respectto silicon and provide a high trapping density and longer retention.

In the example illustrated in FIG. 6, charge transport element 656includes a first material 651, and a second material 652 forming adouble-layer direct tunnel VARIOT barrier and providing for fasterprogramming when compared with the example of FIG. 5. As illustrated inFIG. 6, memory cell 603 (e.g., charge transport element 656) may alsoinclude a third material 654 between e.g., in direct contact with) lessnon-volatile charge storage element 653 and non-volatile charge storageelement 655. In an embodiment, non-volatile charge storage element 655may be deposited on top of third material 654. Further, although notshown in FIG. 6, charge transport element 653 may include optionally anLa₂O₃ material between first material 651 and second material 652 toextend the refresh time for L2-L3. The tunnel material 654 can be placedbetween less non-volatile charge storage element 653 and non-volatilecharge storage element 655 to extend the tunneling distance from siliconsubstrate 650, thereby reducing back-tunneling and enlarging the L₄memory window needed to provide MLC high capacity L₄.

First material 651 can be a high-K oxygen-rich silicon oxynitridematerial having a composition and fabrication analogous to thatpreviously described for first material 311 of charge transport element317 in connection with FIG. 3. In an embodiment, second and thirdmaterials 652 and 654 can both be an HfSiON material. In an additionalembodiment, second and third materials 652 and 654 can both be an HfLaONmaterial, similar to the stack design described in connection with FIG.5.

Utilizing such materials for first material 651, second material 652,and third material 654 can have benefits analogous to those previouslydescribed for charge transport element 317 in connection with FIG. 3.Additionally, the HfSiON or HfLaON material utilized for second material652 and third material 654 may have a high K-value, and therefore theelectrostatic field that may be caused by charge stored in the nitridematerial of less non-volatile charge storage element 653 may be lower ascompared to that of a single oxygen-rich silicon oxynitride layer, whichcan reduce the rate of charge loss to substrate element 650.

First material 651 and second material 652 can be ultra-thin materials.For instance, first material 651 and second material 652 can have athickness of about 1 nm to 1.5 nm. Third material 654 can be thickerthan first and second materials 651 and 652. For instance, thirdmaterial 654 can have a thickness of about 4 nm to 5 nm. Further, lessnon-volatile charge storage element 653 can have a thickness of 3 nm,and non-volatile charge storage element 655 can be thicker than element653. Further, the charge blocking element of cell 603 can have athickness of about 7 nm, and an EOT of approximately 2.0 nm. The totalstack EOT can be about 8.5 nm, with a physical thickness of about 26 nm.

During operation of cell 603, such as, for instance, during a programoperation being performed on cell 603, a charge (e.g., electron) 657 maybe transported from substrate element 650 through charge transportelement 656 (e.g., through first material 651, second material 652,and/or third material 654) to either less non-volatile charge storageelement 653 or non-volatile charge storage element 655, as illustratedin FIG. 6. As an example, a program operation performed on cell 603 caninclude applying a program (e.g., write) voltage to cell 603, andwhether the charge is transported to less non-volatile charge storageelement 653 or non-volatile charge storage element 655 during theprogram operation may depend on the duration for which the programvoltage is applied to the cell. For instance, a program voltage of+/−6.5-7.0 V applied to the cell for 100 nanoseconds (ns) may result inthe charge being transported to less non-volatile charge storage element653, while a program voltage of +/−6.5-7.0 V applied to the cell for 1millisecond (ms) may result in the charge being transported tonon-volatile charge storage element 655.

The charge 657 may be transported through charge transport element 656by double layer VARIOT direct tunnel barrier 656, which can providefield-enhanced fast charge transport to volatile storage element 653trapping centers, for instance, enabling L2-L3 functionality. Further,charge transport through element 654 may take place by modifiedFowler-Nordheim (FN) tunneling, which is slower and requires a higherpotential drop across element 654. During programming and erasing, holetransport from silicon substrate 650 may be prevented due to the highhole energy barrier of materials 651, 652, and 654. The stack design maybe, therefore, comparatively slower for L4 functionality as comparedwith the examples of the previously figures.

The next three cells illustrated in FIGS. 7-9, as well as the cellillustrated in FIG. 11, are based on the employment of a high Kinterface metal oxide dielectric with lower conduction band energy levelfor electron with reference to silicon substrate, but with highervalence band energy barrier for hole injection. An HfO₂ dielectrichaving reliability and low leakage and has been used for scaled FETdevices for CMOS logic technology. In previous approaches, a stress-freecomposition of conventional silicon-oxynitride of composition Si₂ON₂(atomic oxygen concentration of 20%) has been used in previous silicontechnology applications as an interface dielectric with lower conductionband energy level for electron in MIS (metal-insulator-semiconductor)devices where higher electron injection may be desired. However, thedielectric constant of Si₂ON₂ is similar to nitride and significantlylower compared to that of HfO₂, which is 25. Use of HfO₂ at the siliconinjecting interface to promote enhanced injection from silicon substrateduring writing for NVM-FET design also requires a higher energy barrierfor electron adjacent to HfO₂ to reduce reverse tunneling of electronsback to silicon when the writing pulse is removed from the gate. Thiscan be achieved by employing a three-layer direct tunnel barriercomprising low-energy/high-energy/low-energy conduction band materials,where HfO₂ is the first direct tunnel layer at the silicon/insulatorinterface. This type of barrier is known as CRSETED barrier. Due tolower energy barrier at the silicon-insulator interface, electroninjection could be readily achieved from silicon into the insulatorstack at relatively lower voltage. CRESTED barrier, therefore, can allowlower power designs for MSUM devices in accordance with the presentdisclosure. The following illustrations of MSUM designs are based on+/−5V Vpp requirements for programming for all cases of memory celldesigns. Crested barrier designs of NVM cells may have applicability inhigh capacity NAND-Flash and NOR-Flash memory designs to conserve powerand where fast performance is not critical in applications.

FIG. 7 illustrates a portion of a multifunctional memory cell 704 inaccordance with an embodiment of the present disclosure. For example,FIG. 7 illustrates a partial energy band diagram of multifunctionalmemory cell 704. Cell 704 can be a low power memory cell that canprovide both L3 and L4-MLS functionality, while consuming a relativelylow amount of power during operation (e.g., during program and/or eraseoperations performed on the cell). In an embodiment, cell 704 cancomprise a stack that includes a charge transport element having analuminum oxide (Al₂O₃) material or silicon dioxide (SiO₂) material orOR-SiON material between two HfO₂ materials, or optionally two hafniumaluminium oxide (HfAlO) materials, a nitride less non-volatile chargestorage element, an additional HfSiON or HfLaON charge transport elementto reduce charge loss to the silicon substrate and enahnace the memorywindow for MLC capability, a GaN non-volatile charge storage element,and an HfLaON charge blocking element, as will be described herein. Thisallows for a standard seven-layer design. However, an additional layerof i-SRN may be adjacent to the GaN non-volatile charge storage elementto further enhance the memory window for improved MLC capability.

As shown in FIG. 7, cell 704 can include a substrate element 760, acharge transport element 766 adjacent (e.g., in direct contact with)substrate element 760, a less non-volatile charge storage element 763adjacent charge transport element 766, and a non-volatile charge storageelement 765. Substrate element 760 can be, for example, a siliconmaterial. Further, although not shown in FIG. 7, cell 704 can alsoinclude a charge blocking element adjacent non-volatile charge storageelement 765, and a gate element adjacent the charge blocking element.The charge blocking element and gate element can be analogous to chargeblocking element 315 and gate element 316, respectively, previouslydescribed in connection with FIG. 3.

In the example illustrated in FIG. 7, less non-volatile (e.g., DRAM)charge storage element 763 can be a nitride material, such as, forinstance, a Si₃N₄ material, which can have a shallow trap depth toenhance detrapping and increase the speed of erase operations performedon cell 704. Non-volatile (e.g., NROM) charge storage element 765 can bea GaN material, which can have a negative conduction offset band withrespect to silicon and provide a high trapping density with deepertraps.

In the example illustrated in FIG. 7, charge transport element 766includes a first material 761-1, a second material 761-2, and a thirdmaterial 762 between materials 761-1 and 761-2. As illustrated in FIG.7, memory cell 704 (e.g., charge transport element 766) may also includea fourth material 764 between (e.g., in direct contact with) lessnon-volatile charge storage element 763 and non-volatile charge storageelement 765. In an embodiment, non-volatile charge storage element 765may be deposited on top of fourth material 764.

In an embodiment, first material 761-1 and second material 761-2 canboth be an HfO₂ material, and in an additional embodiment, firstmaterial 761-1 and 761-2 can both be a hafnium aluminium oxide (HfAlO)material. Further, in an embodiment third material 762 can be analuminum oxide (Al₂O₃) material, in an additional embodiment thirdmaterial 762 can be a silicon dioxide (SiO₂) material, and in anadditional embodiment third material 762 can be an oxygen-rich siliconoxynitride material. Further, in an embodiment, fourth material 764 canbe an HfSiON material, and in an additional embodiment fourth material764 can be an HfLaON material. Utilizing such materials for firstmaterial 761-1, second material 761-2, third material 762, and fourthmaterial 764 can have benefits analogous to those previously describedfor charge transport element 656 in connection with FIG. 6, except thatthe CRESTED barrier design with high energy barrier associated withmaterial 762 can effectively reduce electron charge leakage to thesilicon substrate during standby retention state, and can extend therefresh time for L3 functionality as well as memory retention and thememory window for L4 MLC design at a lower power level.

First material 761-1 may have a thickness of 2.5 nm to insure a lowinterface state density design with the silicon substrate, and secondmaterial and third material 761-2 and 762 can also be in the same rangeof thickness to insure direct tunneling in those materials. The EOT forthe design of charge transport element 766 can be around less than 1 nmfor a +/−5 Vpp. Fourth material 764 can be thicker than first, second,and third materials 761-1, 761-2, and 762. For instance, fourth material764 can have a thickness between 3-5 nm. Further, less non-volatilecharge storage element 753 can have a thickness of about 3 to 4 nm, andnon-volatile charge storage element 755 can have a thickness of about 3to 5 nm. Further, the charge blocking element of cell 703 can have athickness of 7 to 10 nm, and an EOT of approximately 2.0 nm. The stackEOT may be about 7 nm for the +/−5 V design, with a physical thicknessof about 27 to 30 nm.

During operation of cell 704, such as, for instance, during a programoperation being performed on cell 704, a charge (e.g., electron) 767 maybe transported from substrate element 760 through charge transportelement 766 (e.g., through first material 761-1, third material 762,second material 761-2, and/or fourth material 764) to either lessnon-volatile charge storage element 763 or non-volatile charge storageelement 765, as illustrated in FIG. 7. As an example, a programoperation performed on cell 704 can include applying a program (e.g.,write) voltage to cell 704, and whether the charge is transported toless non-volatile charge storage element 763 or non-volatile chargestorage element 765 during the program operation may depend on theduration for which the program voltage is applied to the cell. Forinstance, a program voltage of +/−5.0 V applied to the cell for lessthan 50 ns may result in the charge being transported to lessnon-volatile charge storage element 763, while a program voltage of+/−5.0 V applied to the cell for 500 μs to 1 millisecond (ms) may resultin the charge being transported to non-volatile charge storage element765.

The charge 767 may be transported through charge transport element 766by, for instance, direct tunneling through charge transport element 766.However, the charge may be transported through charge transport element763 for trapping into non-volatile storage element 765 through eitherdirect electron tunneling or by modified Fowler-Nordheim tunnelingdepending on the thickness of material 763. Therefore, L4 performancemay vary significantly, and may be dependent on the design objective andthickness of element 763. Although the L4 performance may be comparableto previous NAND flash designs, this embodiment may have simultaneousfast L3 functionality and MLC design capacity within the same memorycell, while operating with an order of magnitude lower power.

FIG. 8 illustrates a portion of a multifunctional memory cell 805 inaccordance with an embodiment of the present disclosure. For example,FIG. 8 illustrates an energy band diagram of multifunctional memory cell805 having a crested barrier similar to the memory cell described inconnection with FIG. 7 with a charge storage and trapping design forL4-L5 MLC high capacity applications. Cell 805 can be a low cost, higherperformance memory cell that can provide both L4 and L5-MLSfunctionality with a significantly larger window as compared to thememory cell described in connection with FIG. 7 with the addition of twomaterials, while at the same time operating at relatively low power(e.g., Vpp=+/−5V). In an embodiment, cell 805 can comprise a stack thatincludes a charge transport element having an OR-SiON material betweentwo HfO₂ materials, a nitride less non-volatile charge storage elementfor L3 functionality similar to the memory cell of FIG. 7, anon-volatile charge storage element having an HfO₂ material between twoi-SRN materials, and a charge blocking element having a fixed negativecharge interface between an La₂O₃ material and Al₂O₃ material. With asignificantly larger memory window for MLC designs and a greater sensemargin between memory states, the design may provide faster and morereliable sensing and consequently faster access and more robust MLCdesigns with higher capacity.

As shown in FIG. 8, cell 805 can include a substrate element 870, acharge transport element 881 adjacent (e.g., in direct contact with)substrate element 870, a less non-volatile charge storage element 873adjacent charge transport element 881, a non-volatile charge storageelement 882 adjacent less non-volatile charge storage element 873, acharge blocking element 883 adjacent non-volatile charge storage element882, and a gate element 879 adjacent charge blocking element 883.Substrate element 870 can be, for example, a silicon material, and gateelement 879 can be an insulator-metal interface material such as, forinstance, TaN or TiN.

In the example illustrated in FIG. 8, charge blocking element 883includes a first material 876, a second material 878, and a negativecharge interface 877 between first and second materials 876 and 878.First material 876 can be a La₂O₃ material, and second material 878 canbe an Al₂O₃ material. Utilization of such materials for first material876 and second material 878 can prevent leakage of charge stored incharge storage elements 873 and/or 882, as will be further describedherein.

Less non-volatile (e.g., SRAM or DRAM) charge storage element 873 can bea nitride material, which can provide stability and a large retentionwindow for the SRAM or DRAM functionality. Charge storage element 882can include a charge trapping material 875 between two charge storagematerials 874-1 and material 874-2, both of which can be a silicon-richnitride material, such as, for instance, an injector silicon-richnitride material, to enhance charge storage (e.g., the memory window).Charge trapping material 875 could be an HfO₂ material, which canprovide high density of charge traps. A charge-free layer 876 adjacentto the storage material 874-2 also interfaces the blocking material 878with a large energy barrier. The specific blocking material, forinstance, Al₂O₃, can react with material 876, for instance, La₂O₃, toprovide at the mutual interface a high density of fixed negative chargepreventing charge loss to the gate by creating a repulsiveelectro-static field. This can provide a very large L4-L5 memory windowwith MLC capacity. Furthermore, while storage element 873 can provide L2functionality as with other previous memory cells discussed, a combinedeffect of materials 874-1 and 875 can provide L3 functionality.Similarly, a combination of materials 875, 874-2, 876 and fixed negativecharge 877 can provide L4-L5 MLC capability.

In the example illustrated in FIG. 8, charge transport element 881includes a first material 871-1, a second material 871-2, and a thirdmaterial 872 between materials 871-1 and 871-2. First material 871-1 andsecond material 871-2 can both be an HfO₂ material, and third material872 can be a high-K oxygen-rich silicon oxynitride material having acomposition and fabrication analogous to that previously described forfirst material 311 of charge transport element 317 in connection withFIG. 3. Utilizing such materials for first material 871-1, secondmaterial 871-2, and third material 872 can have benefits analogous tothose previously described for charge transport element 768 inconnection with FIG. 7.

During operation of cell 805, such as, for instance, during a programoperation being performed on cell 805, a charge (e.g., electron) 884 maybe transported from substrate element 870 through charge transportelement 881 (e.g., through first material 871-1) to either lessnon-volatile charge storage element 873 or non-volatile charge storageelement 875 aided by either storage material 874-1 and/or 874-2, asillustrated in FIG. 8. The charge 884 may be transported through chargetransport element 881 by, for instance, tunneling through chargetransport element 881, and may be subsequently stored in storagematerial 874-1 and 874-2 as well as trapped in element 875. Thetunneling transport characteristics may be similar to that discussedpreviously in connection with FIG. 7 with direct tunneling through thecrested barrier.

The charge can then be trapped and stored by the charge storage element(e.g., charge storage element 873 or 882) to which it has beentransported. Charge blocking element 883 can prevent the stored chargefrom leaking while it is being stored. For example, negative chargeinterface 877 may include fixed negative charges generated at theinterface of first material 876 and second material 878 due to the postdeposition anneal that may occur after materials 876 and 878 aredeposited. These fixed negative charges can reduce and/or prevent chargeloss to gate 879.

FIG. 9 illustrates a portion of a multifunctional memory cell 906 inaccordance with an embodiment of the present disclosure. For example,FIG. 9 illustrates an energy band diagram of multifunctional memory cell906 with a double layered direct tunnel crested barrier with afive-layer stack focused on lower power, lower cost, and highperformance with an operational objection of Vpp=+/−5 V. Memory cell 906can provide both L1-L2 functionality and L3 functionality, whileconsuming a low amount of power during operation (e.g., during programand/or erase operations performed on the cell), being cheap and/or easyto process (e.g., fabricate), and/or performing at a high speed (e.g.,having increased speeds for program and/or erase operations performed onthe cell). In an embodiment, cell 906 can comprise a stack that includesa charge transport element having an HfO₂ material and a lanthanumaluminate (LaAlO₃) material, an Si₃N₄ volatile charge storage element, aGaN non-volatile charge storage element, and an La₂O₃ charge blockingelement. In an embodiment, cell 906 can comprise a stack that includes acharge transport element having an HfO₂ material and either an Si₂ON₂material or an La₂O₃ material, a nitride less non-volatile chargestorage element, a non-volatile charge storage element having a GaNmaterial and an La₂O₃ material for blocking. In an embodiment, cell 906can comprise a stack that includes a charge transport element having anHfLaSiON material and an HfO₂ material and either an Si₂ON₂ material oran La₂O₃ material, a nitride less non-volatile charge storage elementhaving a nitride material and an i-SRN material, a non-volatile chargestorage element having an a GaN material and an La₂O₃ material forblocking. In an embodiment, cell 906 can comprise a stack that includesa charge transport element having an HfO₂ material, a second chargetransport element having an Si₂ON₂ or an La₂O₃ material, a lessnon-volatile charge storage element having a nitride material, and anon-volatile charge storage element having a GaN material and an La₂O₃charge blocking material.

As shown in FIG. 9, cell 906 can include a substrate element 985, acharge transport element 992 adjacent (e.g., in direct contact with)substrate element 985, a less non-volatile charge storage element 988adjacent charge transport element 992, a non-volatile charge storageelement 989 adjacent volatile charge storage element 988, a chargeblocking element 990 adjacent non-volatile charge storage element 989,and a gate element 991 adjacent charge blocking element 990. Substrateelement 985 can be, for example, a silicon material, and gate element991 can be an insulator-metal interface material such as, for instance,TaN or TiN.

In an embodiment (e.g., an embodiment in which cell 906 is a low cost,low power, high performance cell), charge blocking element 990 can be aLa₂O₃ material. Utilizing such a material for charge blocking element990 can prevent leakage of charge stored in charge storage elements 988and/or 989 in a manner analogous to that previously described for chargeblocking element 883 in connection with FIG. 8, and can provide dualcarrier functionality for cell 906, as will be further described herein.

Cell 906 may operate simultaneously in multimode tunneling and mayutilize both the silicon substrate and gate as carrier sources and asinjecting electrodes. For example, during programming, electron sourcemay be the silicon substrate and hole source may simultaneously be theTaN gate owing to a low energy barrier from either end (HfO₂ interfacingsilicon 985 provides low barrier for electron while La₂O₃ at gate endprovides low energy barrier for holes). However, since electrons fromsilicon will move by direct tunneling while holes from gate will move bymodified Fowler Nordheim tunneling (tunneling distance may be about 10nm due to the blocking layer thickness of La₂O₃), charge trapping innitride would primarily be due to electrons injected from the silicon.Any injection of hole from the gate would enhance the internal field andconsequently, electrons injected from the silicon will experienceenhanced field. This may result in higher performance for L1-L2functionality as well as L3 functionality enhancing electron trappingfor both charge storage elements 988 and 989. This may be especiallytrue when short programming pulses (e.g. 10 to 20 ns pulses). However,when programming pulses are longer, considerable hole injection will beinitiated from the gate end and will get stored at element 989. This mayreduce the memory window due to electron-hole compensation. A similarphenomenon could be operative when the gate polarity would be reversedfor erasing. Therefore, the performance of the memory cell would dependon the pulsing scheme. Nevertheless, with optimized pulsing scheme, cell906 could have lower cost and power and deliver higher performance.

Memory cell 906 may have a low EOT stack design and can operate withshort programming pluses, for the reasons previously described. Thestack EOT may be around 5-6 nm and may be significantly lower than otherdesigns for operating in the regime of Vpp=+/−5V. The dual layer tunnelEOT of 992 may be around 0.6 to 0.7 nm, the combined trapping layer EOT(e.g., both storage elements 988 and 989) being less than 4 nm, and theblocking material EOT may be less than 1.3 nm. The L1-L2 functionalitycan be achieved through trapping and detrapping in storage element 988,whereas the L3 functionality can be derived from trapping and detrappingfrom charge storage element 989. L4 functionality may not be sought insuch designs for reasons mentioned above. The design can provide L1-L2functionality at +/−5V, 10-20 ns and L3 functionality at +/−5V, lessthan 100 ns using multiple 10 ns pulsing scheme.

In an embodiment (e.g., a low cost, high performance embodiment), lessnon-volatile charge storage element 988 can be a nitride material, suchas, for instance, a Si₃N₄ material. In such an embodiment, non-volatile(e.g., NROM) charge storage element 989 can be a GaN material, which canhave a negative conduction offset band with respect to silicon andprovide a high trapping density and deeper level trapping. In such anembodiment, non-volatile charge storage element 989 can be a GaNmaterial that provides working memory (e.g., NROM) L3 functionality.

During operation of cell 906, such as, for instance, during a programoperation being performed on cell 906, a charge (e.g., electron) 993 maybe transported from substrate element 985 through charge transportelement 992 (e.g., through first material 986 and second material 987)to less non-volatile charge storage element 988 or non-volatile chargestorage element 989, as illustrated in FIG. 9. All other operationattributes can be analogous to those previously described herein.

FIG. 10 illustrates a portion of a multifunctional memory cell 1007 inaccordance with an embodiment of the present disclosure. For example,FIG. 10 illustrates an energy band diagram of multifunctional memorycell 1007. Cell 1007 combines may of the transport, trapping, andblocking features described in the cell designs of FIGS. 3-9, and canprovide simultaneously L1, L2, L3, and L4-L5 MLS functionality with an11-layer design for operability at Vpp=+/−7 V. Further, cell 1007 can bean MLC having a large memory window, thereby achieving high storagedensity and/or capacity. For instance, cell 1007 can be a two level cellthat can be programmed to a targeted one of four possible data states,or a triple level cell (TLC) that can be programmed to a targeted one ofeight possible data states. In an embodiment, cell 1007 can comprise astack that includes a charge transport element having an OR-SiONmaterial, an i-SRN material, and an La₂O₃ material, a nitride volatilecharge storage element, an additional La₂O₃ charge transport element, anon-volatile charge storage element having a GaN material and an i-SRNmaterial, and a charge blocking element having an La₂O₃ material, anAl₂O₃ material, and an HfSiON material. In an embodiment, cell 1007 cancomprise a stack that includes a charge transport element having anOR-SiON material, an La₂O₃ material, and either an i-SRN material or anHfO₂ material, a volatile charge storage element having a nitridematerial and an i-SRN material, a non-volatile charge storage elementhaving a GaN material and an i-SRN material, and a charge blockingelement having an La₂O₃ material, an Al₂O₃ material, and an HfLaONmaterial.

As shown in FIG. 10, cell 1007 can include a substrate element 1010, acharge transport element 1018 adjacent (e.g., in direct contact with)substrate element 1010, a first volatile (e.g., SRAM) charge storageelement 1014-1 adjacent charge transport element 1018, a second volatile(e.g., DRAM) charge storage element 1014-2, a non-volatile (e.g., NROMand/or NAND) charge storage element 1019 adjacent second volatile chargestorage element 1014-2, a charge blocking element 1020 adjacentnon-volatile charge storage element 1019, and a gate element 1017adjacent charge blocking element 1020. Substrate element 1010 can be,for example, a silicon material, and gate element 1017 can be aninsulator-metal interface material such as, for instance, TaN or TiN.

In the example illustrated in FIG. 10, charge blocking element 1020includes a first material 1013-3, a second material 1016, and a thirdmaterial 1015 between first and second materials 1013-3 and 1016 thatcan be a negative charge interface. First material 1013-3 can be a La₂O₃material, second material 1016 can be a thermally stable, low leakagehafnium oxynitride material (e.g., HfLaON, HfAlON, HfLaON, or HfSiON)material with benefits analogous to those previously described forcharge blocking element 316 in connection with FIG. 3, and thirdmaterial 1015 can be an Al₂O₃ material. Utilization of such materialsfor first material 1013-3 and third material 1015 (e.g., the negativecharge interface) can prevent leakage of charge stored in the chargestorage elements, in a manner analogous to that previously described forcharge blocking element 883 in connection with FIG. 8.

In the example illustrated in FIG. 10, non-volatile charge storageelement 1019 can include a first non-volatile charge storage material1021 and a second non-volatile charge storage material 1012-2. Firstmaterial 1021 can be a GaN material, which can have a negativeconduction offset band with respect to silicon and provide a hightrapping density, and second material 1012-2 can be a silicon-richnitride material, such as, for instance, an injector silicon-richnitride material, to further enhance charge storage (e.g., the memorywindow) for the flash memory functionality. In the example illustratedin FIG. 10, first and second materials 1021 and 1012-2 can comprise asingle non-volatile (e.g., NROM) charge storage element (e.g., 1019),and in an additional example, first and second materials 1021 and 1012-2can comprise separate non-volatile (e.g., NROM and NAND, respectively)charge storage elements.

Further, in the example illustrated in FIG. 10, first and secondvolatile charge storage elements 1014-1 and 1014-2 can both be a nitridematerial, which can provide stability and a large retention window forthe respective SRAM and DRAM functionalities. In an additional example(e.g., the example in which first and second non-volatile charge storagematerials 1021 and 1012-2 comprise separate non-volatile charge storageelements), first volatile charge storage element 1014 can be a nitridematerial and second volatile charge storage element 1014-2 can be asilicon-rich nitride material (e.g., an injector silicon-rich nitridematerial). In such an example, the combined stack of volatile andnon-volatile charge storage elements can have an EOT of 3 nm.

In the example illustrated in FIG. 10, charge transport element 1018includes a first material 1011, a second material 1013-1, and a thirdmaterial 1012-1 between materials 1011 and 1013-1. As illustrated inFIG. 10, memory cell 1007 (e.g., charge transport element 1018) may alsoinclude a fourth material 1013-2, which can be, for instance, an La₂O₃material, between (e.g., in direct contact with) volatile charge storageelements 1014-1 and 1014-2. However, in an additional example (e.g., theexample in which first and second non-volatile charge storage materials1021 and 1012-2 comprise separate non-volatile charge storage elements),memory cell 1007 may not include fourth material 1013-2 (e.g., in suchan example, volatile charge storage elements 1014-1 and 1014-2 are indirect contact with each other). Further, in an additional example,charge transport element 1018 may not include third material 1012-1(e.g., in such an example, first material 1011 and second material1013-1 are in direct contact with each other).

First material 1011 can be a high-K oxygen-rich silicon oxynitridematerial having a composition and fabrication analogous to thatpreviously described for first material 311 of charge transport element317 in connection with FIG. 3. Further, in the example illustrated inFIG. 8, second material 1013-1 can be an La₂O₃ material, and thirdmaterial 1012-1 can be a silicon-rich nitride material (e.g., aninjector silicon-rich nitride material) having a thickness of 1.0 to 1.5nm to provide a retarding field for charges to be trapped in volatilecharge storage element 1014-1. In an additional example, (e.g., theexample in which first and second non-volatile charge storage materials1021 and 1012-2 comprise separate non-volatile charge storage elements),second material 1013-1 can be an HfO₂ material and third material 1012-1can be an La₂O₃ material. Utilizing such materials for charge transportelement 1018 can have benefits analogous to those previously describedfor charge transport elements 317 and/or 429 in connection with FIGS. 3and 4, respectively. Further, in such examples, charge transport element1018 can have an EOT of 1.7 nm.

During operation of cell 1007, such as, for instance, during a programoperation being performed on cell 1007, a charge (e.g., electron) may betransported from substrate element 1010 through charge transport element1018 to first volatile charge storage element 1014-1, second volatilecharge storage element 1014-2, or non-volatile charge storage element1019 (e.g., first material 1021 or second material 1012-2). As anexample, a program operation performed on cell 1007 can include applyinga program (e.g., write) voltage to cell 1007, and the storage element towhich the charge is transported during the program operation may dependon the duration for which the program voltage is applied to the cell.For instance, a program voltage of +/−7.0 V applied to the cell for 5 nsmay result in the charge being transported to first volatile chargestorage element 1014-1, a program voltage of +/−7.0 V applied to thecell for 20 ns may result in the charge being transported to secondvolatile charge storage element 1014-2, a program voltage of +/−7.0 Vapplied to the cell for 100 ns may result in the charge beingtransported to first non-volatile charge storage material 1021, and aprogram voltage of +/−7.0 V applied to the cell for 500 ns may result inthe charge being transported to second non-volatile charge storagematerial 1012-2.

The charge may be transported through charge transport element 1018 by,for instance, tunneling through charge transport element 1018. Forexample, charge transport element 1018 can be a double layer PBO tunnelbarrier (e.g., in examples in which charge transport element 1018 doesnot include third material 1012-1) or a triple layer PBO tunnel barrier(e.g., in examples in which charge transport element 1018 includes thirdmaterial 1012-1) that can provide internal field-aided enhanced electrontransport, and the charge may tunnel through the PBO tunnel barrier viadirect electron tunneling (e.g. during programming) or hole tunneling(e.g. during erasing). Further, in the example illustrated in FIG. 10(e.g., in which cell 8010 includes fourth material 1013-2), there may beadditional direct tunneling of the charge through fourth material 1013-2to (e.g. during programming) and/or from (e.g., during erasing) secondvolatile charge storage element 1014-2, but no hole tunneling.

The charge can then be trapped and stored by the charge storage elementto which it has been transported. Charge blocking element 1020 canprevent the stored charge from leaking while it is being stored, aspreviously described herein.

FIG. 11 illustrates a portion of a multifunctional memory cell 1109 inaccordance with an embodiment of the present disclosure. For example,FIG. 11 illustrates a partial energy band diagram of multifunctionalmemory cell 1109. Cell 1109 is an additional example of a CRESTEDbarrier tunneling layer design that is similar to the cells previouslydescribed in connection with FIGS. 7 and 8. The design is a six-layerstack uses well-characterized dielectric films with a single-tooldeposition scheme for a low cost memory cell that can provide L2, L3,and L4 functionality. For instance, the elements of cell 1109 can all bedeposited using common processing tools, such asLow-Pressure-Chemical-Vapor-Deposition (LPCVD) tools. In an embodiment,cell 1109 can comprise a stack that forms a two-layer CRESTED tunnelbarrier comprising a thin layer of Si₂ON₂ material interfacing a siliconsubstrate with an HfSiON material to form the tunnel barrier. Further,the stack can include a nitride less non-volatile charge trappingelement, an additional Si₂ON₂ material as the second charge trappingelement, an i-SRN charge storage element, and an HfSiON charge blockingelement.

As shown in FIG. 11, cell 1109 can include a substrate element 1150, adouble-layered charge transport element 1158 adjacent (e.g., in directcontact with) substrate element 1150, a less non-volatile (e.g., DRAM)charge trapping element 1153 adjacent charge transport element 1158, asecond charge trapping element 1154 adjacent the first charge trappingelement 1153, a charge storage element 1155 adjacent element 1154, and acharge blocking element 1156 adjacent charge storage element 1155, and agate element 1157 adjacent charge blocking element 1156. Substrateelement 1150 can be, for example, a silicon material, and gate element1157 can be an insulator-metal interface material such as, for instance,TaN or TiN.

Charge blocking element 1156 can be a thermally stable, low leakagehafnium oxynitride material (e.g., HfLaON, HfAlON, HfTaON, or HfSiON)with benefits analogous to those previously described for chargeblocking element 316 in connection with FIG. 3. Charge blocking element1156 can have a thickness of 7 nm, for instance.

In the example illustrated in FIG. 11, less non-volatile charge storageelement 1153 can be a nitride (e.g., Si₃N₄) material that provides fastcharge trapping and de-trapping for DRAM functionality. Firstnon-volatile charge storage element 1154 can be a Si₂ON₂ material thatcan provide deeper charge trapping, and therefore, greater stability anda larger retention window. Second non-volatile charge storage element1155 can be a silicon-rich nitride material (e.g., an injectorsilicon-rich nitride material) to further enhance charge storage (e.g.,the memory window) for the flash memory functionality.

In the example illustrated in FIG. 11, charge transport element 1158includes a first material 1151 and a second material 1152. Firstmaterial 1151 can be an ultrathin Si₂ON₂ material that can provideinterface stability with substrate element 1150, or an ultrathin Si₃N₄material that can provide a low energy barrier for enhanced chargetransport. Second material 1152 can be an HfSiON material, which canprovide benefits analogous to those previously described for chargetransport element 656 in connection with FIG. 6.

Charge transport element 1158 can have an EOT of 1 nm, storage elements1153, 1154, and 1155 can have a combined EOT of 3 nm, and chargeblocking element 1156 can have an EOT of 2 nm. The combined EOT for thestack comprising charge transport element 1158, storage elements 1153,1154, and 1155, and charge blocking element 1156 can be approximately 6nm for a low-power Vpp=+/−5 V design.

During operation of cell 1109, such as, for instance, during a programoperation being performed on cell 1109, a charge (e.g., electron) 1159may be transported from substrate element 9050 through charge transportelement 1158 (e.g., through first material 1151 and second material1152) to less non-volatile charge storage element 1153, firstnon-volatile charge storage element 1154, or second non-volatile chargestorage element 1155, as illustrated in FIG. 11. As an example, aprogram operation performed on cell 1155 can include applying a program(e.g., write) voltage to cell 1155, and the storage element to which thecharge is transported during the program operation may depend on theduration for which the program voltage is applied to the cell. Forinstance, a program voltage of +/−5 V applied to the cell for less than50 ns may result in the charge being transported to less non-volatilecharge storage element 1153, a program voltage of +/−5 V applied to thecell for 500-1000 ns may result in the charge being transported to firstnon-volatile charge storage element 1154, and subsequently getstransported to second non-volatile charge storage element 1155.

The charge 1159 may be transported through charge transport element 1158by, for instance, tunneling through charge transport element 1158. Forexample, the charge may be transported through charge transport element1158 to less non-volatile trapping element 1153 and/or non-volatiletrapping elements 1154 and 1155 through direct electron tunneling. Forinstance, charge transport element 1158 can be a crested tunnel barrier,which can have characteristics and benefits analogous to thosepreviously described for charge transport element 766 in connection withFIG. 7.

The charge can then be trapped and stored by the charge storage elementto which it has been transported. Charge blocking element 1156 canprevent the stored charge from leaking while it is being stored, aspreviously described herein.

One characteristic of MSUM cell designs described herein is theapplication of multiple trapping dielectric materials with intrinsictrapping properties of trap density (often expressed in terms of captureprobability) and trap energy depth and placement of such materials withreference to the charge sources, (e.g., the semiconductor substrate(silicon)) and the gate of the NVM gate stack design. Well characterizedtrapping dielectric (e.g., silicon nitride (SiN4)) along with deepoffset trapping dielectric (e.g., GaN) have been used and placedappropriately in the MSUM cell designs to achieve simultaneousmultifunctionality with desirable performance in the MSUM deviceillustrations discussed earlier. The significance of specific MSUM cellstack design and the associated pulsing scheme to efficiently inject andstore charges deriving appropriate memory properties (e.g., window,retention, endurance, durability, MLC-capability, multi-functionality)has been described herein. By placing multiple trapping dielectricmaterials with different trapping properties at variable distances fromcharge sources, a variable functionality with variable performance couldbe achieved, which can be tuned to pulsing schemes [(+/−Vpp) and pulsedurations)] to achieve simultaneously desired multi-functionality andperformance characteristics for the MSUM cell. The following cell designaddresses such an MSUM design by incorporating ultra-thin film laminatesof inter-combed nitride and GaN materials placed between the tunnelinglayers and the blocking layer (or layers) for the MSUM cell stackdesign. Many variations of such scheme are possible but will not bespecifically illustrated here.

FIG. 12 illustrates a portion of a multifunctional memory cell 1210 inaccordance with an embodiment of the present disclosure. For example,FIG. 12 illustrates a stack design concept for a variable functionality,variable performance MSUM design comprising multiple layering of twodielectric materials (e.g., nitride with a shallower trap, and GaN withdeeper traps) adjacent to each other as inter-combed laminates in theform of a partial energy band diagram. Cell 1210 can comprise, forexample, a triple-layered tunneling design 1268, with multiple pairs ofnitride-GaN laminates 1269 for charge storage placed between chargetransport element 1268 and charge blocking element 1266. By trapping andstoring charges at different locations and detrapping such chargesthrough a write-erase pulsing scheme, different functionality andassociated performance such as L1-L2, L3, L4-L5, and MLC functionalitycan be simultaneously achieved.

In the example shown in FIG. 12, a three-layered direct tunneling VARIOTbarrier 1268 is illustrated, comprising an HfO₂ material 1262 sandwichedbetween two layers of ultra-thin OR-SiON materials 1261-1 and 1261-2.The charge storage design 1269 illustrated comprises, for example, fourpairs of thin laminates, each comprising nitride material 1264 and GaNmaterial 1265. The blocking element 1266 comprises a thicker layer ofHfLaON and optionally may include a charge storage layer of I-SRNmaterial and an adjacent thin layer of Al2O3 adjacent to 1269 andbetween 1269 and 1266 to further enhance MLC capability.

As shown in FIG. 12, cell 1210 can include a substrate element 1260, acharge transport element 1268 adjacent (e.g., in direct contact with)substrate element 1260, a charge storage element 1269 adjacent chargetransport element 1268, a charge blocking element 1266 adjacent chargestorage element 1269, and a gate element 1267 adjacent charge blockingelement 1266. Substrate element 1260 can be, for example, a siliconmaterial, and gate element 1267 can be an insulator-metal interfacematerial such as, for instance, TaN or TiN.

In an embodiment, charge blocking element 1266 can be a thermallystable, low leakage hafnium oxynitride material (e.g., HfLaON, HfAlON,HfLaON, or HfSiON) with benefits analogous to those previously describedfor charge blocking element 316 in connection with FIG. 3. In anembodiment, charge blocking element 1266 can include a silicon-richnitride material (e.g., i-SRN) adjacent charge storage element 1269, anAl₂O₃ material adjacent the silicon-rich nitride material, and a hafniumoxynitride material (e.g., HfLaON) adjacent the Al₂O₃ material.Utilization of such materials for charge blocking element 1266 canprovide for simultaneous storage of at least 3 bits for multilevelmemory (e.g., 8 memory states for TLC memory) with L2, L3, and L4functionality.

As shown in FIG. 12, charge storage element 1269 can include a number ofalternating nitride materials 1264 and GaN materials 1265 correspondingto different memory levels. For instance, charge storage element 1269can include a first nitride material adjacent charge transport element1268, a first GaN material adjacent the first nitride material, a secondnitride material adjacent the first GaN material, a second GaN materialadjacent the second nitride material, and so on. Utilizing nitride andGaN materials in charge storage element 1269 can have benefits analogousto those previously described herein.

In the example illustrated in FIG. 12, charge transport element 1268includes a first material 1261-1, a second material 1261-2, and a thirdmaterial 1262 between materials 1261-1 and 1262-2. First material 1261-1and second material 1262-2 can both be a high-K oxygen-rich siliconoxynitride material having a composition and fabrication analogous tothat previously described for first material 311 of charge transportelement 317 in connection with FIG. 3. Third material 1262 can be anHfO₂ material. Utilizing such materials in charge transport element 1268can have benefits analogous to those previously described herein.

First material 1261-1 can have a thickness of 1 nm, second material1261-2 can have a thickness of 1-1.5 nm, and third material 1262 canhave a thickness of 2-3 nm. Further, each respective nitride material1264 and GaN material 1265 of charge storage element 1269 can have athickness of 1 nm. In the embodiment in which charge blocking element1266 is a hafnium oxynitride material, charge blocking element 1266(e.g., the hafnium oxynitride material) can have a thickness of 8 nm.The MSUM stack design 1210 can have an EOT of 6.9 nm, and optionallywith an MLC design could have an EOT of approximately 8.9 nm. Thethinner EOT (E.g., 6.9 nm) would be designed for Vpp=+/−5 V, whereas thethicker EOT design (e.g., 8.9 nm) would be designed for Vpp=+/−7 V. Inthe embodiment in which charge blocking element 1266 includes asilicon-rich nitride material, an Al₂O₃ material, and a hafniumoxynitride material, those materials can have thicknesses of 4 nm, 2 nm,and 8 nm, respectively, and the stack comprising charge transportelement 1268, storage element 1269, and charge blocking element 1266 canhave an EOT of 8.9 nm.

During operation of cell 1210, such as, for instance, during a programoperation being performed on cell 1210, a charge (e.g., electron) may betransported from substrate element 1260 through charge transport element1268 (e.g., through first material 1261-1, third material 1262, andsecond material 1261-2) to one of the nitride materials 1264 or GaNmaterials 1265 of charge storage element 1269. The charge may betransported through charge transport element 1268 by, for instance,tunneling through charge transport element 1268.

As an example, a program operation performed on cell 1210 can includeapplying a program (e.g., write) voltage to cell 1201, and which nitrideor GaN material (e.g., which memory level) the charge is transported toduring the program operation may depend on the duration for which theprogram voltage and duration of the program pulse is applied to thecell. The charge can then be trapped and stored in the material (e.g.level) to which it is transported. For erasing, the program potentialand pulse characteristics at the gate would be reversed for detrappingthe charges.

The programming for different levels may be fast from trapping andde-trapping from the nitride materials at different tunnel distances forL1 (e.g., closest to substrate element 1260), and may be successivelylonger from trapping at increasing tunnel distances. The deeper trappinglevels of trapping in the GaN materials at different tunnel distancesmay provide longer retention and refresh time, which can increaseexponentially for charges trapped further from substrate element 1260.

For instance, in the embodiment in which charge blocking element 1266 isa hafnium oxynitride material, a program voltage of +/−5 V applied tothe cell for 3 ns may result in the charge being transported to L1, aprogram voltage of +/−5 V applied to the cell for 30 ns may result inthe charge being transported to L2, a program voltage of +/−5 V appliedto the cell for 300 ns may result in the charge being transported to L3,and a program voltage of +/−5 V applied to the cell for 30,000 ns mayresult in the charge being transported to L4. As an additional example,in the embodiment in which charge blocking element 1266 includes asilicon-rich nitride material, an Al₂O₃ material, and a hafniumoxynitride material, a program voltage of +/−7 V applied to the cell for10 ns may result in the charge being transported to L2, a programvoltage of +/−7 V applied to the cell for 100 ns may result in thecharge being transported to L3, and a program voltage of +/−7 V appliedto the cell for 30,000 ns may result in the charge being transported toL4.

FIG. 13 illustrates a memory array 1308 having multifunctional memorycells in accordance with an embodiment of the present disclosure. Forinstance, array 1308 can include multifunctional memory cells previouslydescribed herein in connection with any of FIGS. 3-11. Array 1308 canbe, for instance, a three-dimensional array in which the multifunctionalmemory cells are vertically stacked, planar multifunctional memorycells.

As shown in FIG. 13, array 1308 can include access (e.g., word) lines1335-1337 that extend in the x-direction, and data (e.g., bit) lines1331-1333 that extend substantially perpendicular in the y-direction. Amultifunctional memory cell in accordance with the present disclosurecan be located at the intersection of each respective word line and bitline, as illustrated in FIG. 13.

Isolation areas 1340, 1341 can be formed between the bit lines 1331,1332 and 1332, 1333, respectively, while isolation areas 1342, 1343 canbe formed between the word lines 1335, 1336 and 1336, 1337,respectively. A common source line can be formed in the memory array andcommonly coupled to the bit lines 1331, 1333 for devices on either side(left or right).

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results can be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of a number of embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of ordinary skill in the artupon reviewing the above description. The scope of a number ofembodiments of the present disclosure includes other applications inwhich the above structures and methods are used. Therefore, the scope ofa number of embodiments of the present disclosure should be determinedwith reference to the appended claims, along with the full range ofequivalents to which such claims are entitled.

In the foregoing Detailed Description, some features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

What is claimed is:
 1. A method of operating a memory cell, comprising:transporting a charge through an oxygen-rich silicon oxynitride materialof the memory cell to at least one of: a volatile charge storage elementof the memory cell; and a non-volatile charge storage element of thememory cell having a silicon-rich nitride material; and storing, by thecharge storage element to which the charge is transported, the charge.2. The method of claim 1, wherein the method includes simultaneouslytransporting a first charge through the oxygen-rich silicon oxynitridematerial to the volatile charge storage element and a second chargethrough the oxygen-rich silicon oxynitride material to the non-volatilecharge storage element.
 3. The method of claim 1, wherein methodincludes separately transporting a first charge through the oxygen-richsilicon oxynitride material to the volatile charge storage element and asecond charge through the oxygen-rich silicon oxynitride material to thenon-volatile charge storage element.
 4. The method of claim 1, whereintransporting the charge through the oxygen-rich silicon oxynitridematerial includes tunneling an electron through the oxygen-rich siliconoxynitride material.
 5. The method of claim 1, wherein the methodincludes transporting the charge through the oxygen-rich siliconoxynitride material during a program operation performed on the memorycell.
 6. The method of claim 1, wherein the method includes preventingleakage of stored charge using a hafnium oxynitride material.
 7. Themethod of claim 1, wherein the method includes preventing leakage of thestored charge using an aluminum oxide material and a lanthanum oxidematerial.
 8. The method of claim 1, wherein the method includestransporting the charge through an additional material of the memorycell to the non-volatile charge storage element of the memory cell,wherein the additional material is between the volatile charge storageelement of the memory cell and the non-volatile charge storage elementof the memory cell.
 9. A memory cell, comprising: a charge transportelement having a hafnium dioxide material; a volatile charge storageelement configured to store a first charge transported through thecharge transport element, wherein the volatile charge storage elementincludes a nitride material; and a non-volatile charge storage elementconfigured to store a second charge transported through the chargetransport element, wherein the non-volatile charge storage elementincludes a gallium nitride material.
 10. The memory cell of claim 9,wherein the charge transport element includes: a first hafnium dioxidematerial a second hafnium dioxide material; and an additional materialbetween the first hafnium dioxide material and the second hafniumdioxide material, wherein the additional material between the firsthafnium dioxide material and the second hafnium dioxide material is: analuminum oxide material; a silicon dioxide material; or an oxygen-richsilicon oxynitride material.
 11. The memory cell of claim 9, wherein thecharge transport element includes a hafnium silicon oxynitride materialbetween the volatile charge storage element and the non-volatile chargestorage element.
 12. The memory cell of claim 9, wherein the chargetransport element includes a hafnium lanthanum oxynitride materialbetween the volatile charge storage element and the non-volatile chargestorage element.
 13. The memory cell of claim 9, wherein the chargetransport element includes an additional material, wherein theadditional material is: a lanthanum aluminate material; a siliconoxynitride material; or a lanthanum oxide material.
 14. The memory cellof claim 9, wherein the memory cell includes a charge blocking elementhaving a lanthanum oxide material.
 15. A memory cell, comprising: acharge transport element having an oxygen-rich silicon oxynitridematerial; a volatile charge storage element configured to store a firstcharge transported through the charge transport element; and anon-volatile charge storage element configured to store a second chargetransported through the charge transport element, wherein thenon-volatile charge storage element includes a silicon-rich nitridematerial.
 16. The memory cell of claim 15, wherein the memory cellincludes a charge blocking element having a hafnium oxynitride material.17. The memory cell of claim 15, wherein the memory cell includes acharge blocking element having an aluminum oxide material and alanthanum oxide material.
 18. The memory cell of claim 15, wherein thecharge transport element includes an additional material between thevolatile charge storage element and the non-volatile charge storageelement.
 19. The memory cell of claim 18, wherein the additionalmaterial is a hafnium dioxide material or a lanthanum oxide material.20. The memory cell of claim 18, wherein the additional material is ahafnium silicon oxynitride material or a hafnium lanthanum oxynitridematerial.